TF2117

TF2117

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TF2117
Gate Drivers
TF Semiconductor Solutions
600V, HIGH-SIDE
-
Tape & Reel (TR)
1
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LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz


600V, HIGH-SIDE GATE DRIVER

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrTF Semiconductor Solutions
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TA)
Voltage - Supply10V ~ 20V
Input TypeNon-Inverting
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)75ns, 35ns
Channel TypeSingle
Driven ConfigurationHigh-Side
Number of Drivers1
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH6V, 9.5V
Current - Peak Output (Source, Sink)290mA, 600mA
DigiKey ProgrammableNot Verified

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