TC58BYG2S0HBAI6
| ： | TC58BYG2S0HBAI6 |
|---|---|
| ： | Memory |
| ： | Toshiba Memory America, Inc. (Kioxia America, Inc.) |
| ： | IC FLASH 4GBIT |
| ： | - |
| ： | Tray |
| ： | 1 |
| TYPE | DESCRIPTION |
| Mfr | Toshiba Memory America, Inc. (Kioxia America, Inc.) |
| Series | Benand™ |
| Package | Tray |
| Product Status | ACTIVE |
| Package / Case | 67-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 512M x 8 |
| DigiKey Programmable | Not Verified |
