GD10MPS12H

GD10MPS12H

  • image of Single Diodes>GD10MPS12H
  • image of Single Diodes>GD10MPS12H
GD10MPS12H
Single Diodes
GeneSiC Semiconductor
DIODE SIL CARB
-
Tube
1
GD10MPS12E
基因碳化硅-GeneSiC
SiC肖特基MPS™
GD10MPS12H
基因碳化硅-GeneSiC
SiC肖特基MPS™
GD10MPS12A
基因碳化硅-GeneSiC
SiC肖特基MPS™


DIODE SIL CARB 1.2KV 10A TO247-2

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrGeneSiC Semiconductor
SeriesSiC Schottky MPS™
PackageTube
Product StatusACTIVE
Package / CaseTO-247-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Current - Average Rectified (Io)10A
Supplier Device PackageTO-247-2
Operating Temperature - Junction175°C
Voltage - DC Reverse (Vr) (Max)1200 V

captcha

86-755-23814471
0