G10N10A
| ： | G10N10A |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | Goford Semiconductor |
| ： | N100V,RD(MAX)13 |
| ： | - |
| ： | Tape & Reel (TR) |
| ： | 1 |
| TYPE | DESCRIPTION |
| Mfr | Goford Semiconductor |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 2A, 10V |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 25 V |
