DI016N06PQ2-AQ

DI016N06PQ2-AQ

  • image of FET, MOSFET Arrays>DI016N06PQ2-AQ
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DI016N06PQ2-AQ
FET, MOSFET Arrays
Diotec Semiconductor
IC
-
Bulk


IC

Product parameters
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TYPEDESCRIPTION
MfrDiotec Semiconductor
Series-
PackageBulk
Product StatusACTIVE
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Configuration2 N-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max16.7W (Tc)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds1260pF @ 30V
Rds On (Max) @ Id, Vgs33mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTDSON-8-4
GradeAutomotive
QualificationAEC-Q101

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