2N2907AUB1

2N2907AUB1

  • image of Single Bipolar Transistors>2N2907AUB1
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2N2907AUB1
Single Bipolar Transistors
STMicroelectronics
RAD-HARD 60 V,
-
Tray
1


RAD-HARD 60 V, 0.6 A PNP TRANSIS

Product parameters
TYPEDESCRIPTION
MfrSTMicroelectronics
Series-
PackageTray
Product StatusACTIVE
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Supplier Device PackageUB
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1.8 W

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