NE68819-T1-A

NE68819-T1-A

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  • image of Bipolar RF Transistors>NE68819-T1-A
NE68819-T1-A
Bipolar RF Transistors
CEL (California Eastern Laboratories)
NPN SILICON AMP
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Tape & Reel (TR)
1
NE68819
瑞萨-Renesas
NONLINEAR MODEL


NPN SILICON AMPLIFIER AND OSCILL

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrCEL (California Eastern Laboratories)
Series-
PackageTape & Reel (TR)
Product StatusOBSOLETE
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain8dB
Power - Max125mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)6V
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 3mA, 1V
Frequency - Transition9GHz
Noise Figure (dB Typ @ f)1.7dB @ 2GHz
Supplier Device PackageSC-75 (USM)

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